Toshiba America Electronic Components

TRANSISTOR 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power

Panasonic Electronic Components

Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

Vishay Siliconix

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3

STMicroelectronics

3A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Vishay Siliconix

Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HEXDIP-4

Samsung Semiconductor

Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Panasonic Electronic Components

Power Field-Effect Transistor, 5A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Powerex Power Semiconductors

Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN

STMicroelectronics

3A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FP, 3 PIN

Toshiba America Electronic Components

TRANSISTOR 3.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS, TO-220IS, 3 PIN, FET General Purpose Power

Vishay Intertechnologies

Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

Samsung Semiconductor

Power Field-Effect Transistor, 2.9A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Toshiba America Electronic Components

TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power

Toshiba America Electronic Components

TRANSISTOR 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power

Samsung Semiconductor

Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3

Freescale Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,3A I(D),TO-220AB

Toshiba America Electronic Components

TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power

STMicroelectronics

4.2A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Samsung Semiconductor

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

Mitsubishi

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE