AUIRF2804S-7P
Vendor: Infineon Technologies
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Manufacturer No:
Infineon Technologies
Category:
MOSFET
Detailed Description:
MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms
Package:
TO-263-7
Data Sheet:
Datasheet
Product Status:
inventory:8778
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Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Infineon Technologies AG
Power Field-Effect Transistor, 160A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Infineon Technologies AG
Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Infineon Technologies AG
Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 75V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
Infineon Technologies AG
Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
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