FDT457N_NL
Vendor: ON Semiconductor
Call
Manufacturer No:
ON Semiconductor
Category:
Uncategorized
Detailed Description:
Package:
Data Sheet:
Datasheet
Product Status:
-
inventory:14216
Add to Cart
RFQ
Go Shopping
STMicroelectronics
N-Channel 30V - 0.039 Ohm - 4A - SOT-223 STripFET(TM) POWER MOSFET
ON Semiconductor
N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 60mΩ, 4000-REEL
Infineon Technologies AG
Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 0.64A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Samsung Semiconductor
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7.2A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Diodes Incorporated
Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
Infineon Technologies AG
Power Field-Effect Transistor, 3.8A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Diodes Incorporated
Power Field-Effect Transistor, 5.5A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 1A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Infineon Technologies AG
Power Field-Effect Transistor, 0.38A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
ON Semiconductor
2A, 60V, 0.175ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA, LEAD FREE, CASE 318E-04, TO-261, 4 PIN
Samsung Semiconductor
Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
Diodes Incorporated
Power Field-Effect Transistor, 1.6A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
ON Semiconductor
2A, 60V, 0.175ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA, LEAD FREE, CASE 318E-04, TO-261, 4 PIN
Samsung Semiconductor
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 0.0005A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
We sincerely hope that we can be your best partner in the distribution of components! Keep trying .Go ahead with our mission.
Got Question? Call us 24/7
Payment Method