FMP12N50ES

Vendor: 富士-FUJI

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Manufacturer No:

富士-FUJI

Category:

301V-500V NMOS

Detailed Description:

功率MOSFET 400V-500V

Package:

Data Sheet:

Datasheet

Product Status:

inventory:17642

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UK3568G-TF1-T

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F1, 3 PIN

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Power Field-Effect Transistor, 13A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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Power Field-Effect Transistor, 13A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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FMI12N50ES

Fuji Electric Co Ltd

Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN

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JX2N7228

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12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

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Fairchild Semiconductor Corporation

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12N50L-TA3-T

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 12A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN

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