Renesas Electronics Corporation

30A, 450V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PL, 3 PIN

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

Fuji Electric Co Ltd

Power Field-Effect Transistor, 3A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, 3 PIN

STMicroelectronics

5.6A, 900V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN

Infineon Technologies AG

Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC PACKAGE-3

International Rectifier

Power Field-Effect Transistor, 20A I(D), 250V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

STMicroelectronics

STW15N50, T247-3

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 42A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

STMicroelectronics

7.6A, 900V, 1.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

STMicroelectronics

N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-3P, 3 PIN

Renesas Electronics Corporation

40A, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PL, 3 PIN

Shindengen Electronic Manufacturing Co Ltd

Power Field-Effect Transistor, 10A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ITO-3P, 3 PIN

Microsemi FPGA & SoC

Power Field-Effect Transistor, 18A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT PACKAGE-3

Samsung Semiconductor

Power Field-Effect Transistor, 34A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

STMicroelectronics

N-channel 900 V, 0.72 Ohm typ., 11 A SuperMESH Power MOSFET in TO-247 package

STMicroelectronics

N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package

Vishay Intertechnologies

Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3 PIN

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 15A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, HALOGEN FREE PACKAGE-3