IPI60R099CP
Vendor: 英飞凌-Infineon
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Manufacturer No:
英飞凌-Infineon
Category:
501V-600V NMOS
Detailed Description:
500V-900V CoolMOS™ N-Channel Power MOSFET
Package:
Data Sheet:
Datasheet
Product Status:
inventory:26770
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Vishay Intertechnologies
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Toshiba America Electronic Components
TRANSISTOR POWER, FET, FET General Purpose Power
Vishay Intertechnologies
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Vishay Intertechnologies
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Infineon Technologies AG
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2
STMicroelectronics
N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in D2PAK package
STMicroelectronics
N-channel 600 V, 0.092 Ohm, 29 A MDmesh(TM) II Power MOSFET in TO-247
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Toshiba America Electronic Components
30.8A, 600V, 0.098ohm, N-CHANNEL, Si, POWER, MOSFET
Toshiba America Electronic Components
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Vishay Intertechnologies
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2
Vishay Intertechnologies
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Vishay Intertechnologies
Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2
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