IRF3711LPBF
Vendor: Infineon Technologies
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Manufacturer No:
Infineon Technologies
Category:
Transistors - FETs, MOSFETs - Single
Detailed Description:
MOSFET N-CH 20V 110A TO262
Package:
TO-262-3 Long Leads, I²Pak, TO-262AA
Data Sheet:
Datasheet
Product Status:
Obsolete
inventory:9443
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International Rectifier
Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
International Rectifier
Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Renesas Electronics Corporation
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,40A I(D),TO-262
Vishay Intertechnologies
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
International Rectifier
Power Field-Effect Transistor, 75A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
International Rectifier
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Vishay Intertechnologies
Power Field-Effect Transistor, 8A I(D), 250V, 0.435ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Renesas Electronics Corporation
86A, 40V, 0.0044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, MP-25 FIN CUT, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Renesas Electronics Corporation
84A, 75V, 0.0125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN
Vishay Intertechnologies
Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC PACKAGE-3
Vishay Intertechnologies
Power Field-Effect Transistor, 8A I(D), 250V, 0.435ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
International Rectifier
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Vishay Intertechnologies
Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3
Vishay Intertechnologies
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
International Rectifier
Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
Vishay Intertechnologies
TRANSISTOR 90 A, 60 V, 0.0052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN, FET General Purpose Power
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