IRFM350U
Vendor: International Rectifier
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Manufacturer No:
International Rectifier
Category:
Power Field-Effect Transistors
Detailed Description:
Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
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Data Sheet:
Datasheet
Product Status:
Obsolete
inventory:5540
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Infineon Technologies AG
14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
International Rectifier
Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
International Rectifier
Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
International Rectifier
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
International Rectifier
Power Field-Effect Transistor, 3.9A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
International Rectifier
Power Field-Effect Transistor, 22A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
International Rectifier
Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
International Rectifier
Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
International Rectifier
Power Field-Effect Transistor, 19A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
International Rectifier
Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
Semtech Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Semtech Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
International Rectifier
Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
International Rectifier
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
International Rectifier
Power Field-Effect Transistor, 3.9A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
International Rectifier
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
International Rectifier
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
Semtech Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Semtech Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Semtech Corporation
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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