IRHSNA54Z60PBF
Vendor: Infineon Technologies AG
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Manufacturer No:
Infineon Technologies AG
Category:
Power Field-Effect Transistors
Detailed Description:
Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN
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inventory:17183
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Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN
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Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
Alpha & Omega Semiconductor
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Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
International Rectifier
Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
STMicroelectronics
N-channel 30 V, 2.5 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
International Rectifier
Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Rochester Electronics LLC
75A, 30V, 0.0033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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