IRLR230ATF
Vendor: Fairchild Semiconductor Corporation
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Manufacturer No:
Fairchild Semiconductor Corporation
Category:
Power Field-Effect Transistors
Detailed Description:
Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Data Sheet:
Datasheet
Product Status:
Obsolete
inventory:13443
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Samsung Semiconductor
Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Harris Semiconductor
Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Harris Semiconductor
Power Field-Effect Transistor, 4.6A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
SANYO Electric Co Ltd
Power Field-Effect Transistor, 4A I(D), 20V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Mitsubishi Electric
Power Field-Effect Transistor, 10A I(D), 250V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
Rochester Electronics LLC
4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
NXP Semiconductors
TRANSISTOR 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Siemens
Power Field-Effect Transistor, 0.6A I(D), 200V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Hitachi Ltd
Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
SANYO Electric Co Ltd
Power Field-Effect Transistor, 0.8A I(D), 250V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN
Panasonic Electronic Components
Power Field-Effect Transistor, 5A I(D), 200V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, N TYPE PACKAGE-3
Mitsubishi Electric
Power Field-Effect Transistor, 10A I(D), 30V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SANYO Electric Co Ltd
Power Field-Effect Transistor, 3A I(D), 30V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLP-3
Shindengen Electronic Manufacturing Co Ltd
Power Field-Effect Transistor, 5A I(D), 200V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3
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