IRLR3105TRPBF
Vendor: 英飞凌(INFINEON)
$2.6316
Manufacturer No:
英飞凌(INFINEON)
Category:
场效应管(MOSFET)
Detailed Description:
场效应管(MOSFET) IRLR3105TRPBF TO-252
Package:
Data Sheet:
Datasheet
Product Status:
inventory:8966
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International Rectifier
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
International Rectifier
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
International Rectifier
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
International Rectifier
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
International Rectifier
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
International Rectifier
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
International Rectifier
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
International Rectifier
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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