IXTP7N60P
Vendor: IXYS Corporation
$2.91
Manufacturer No:
IXYS Corporation
Category:
Power Field-Effect Transistors
Detailed Description:
Power Field-Effect Transistor, 7A I(D), 600V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Package:
Data Sheet:
Datasheet
Product Status:
Obsolete
inventory:11118
Add to Cart
RFQ
Go Shopping
Mitsubishi Electric
Power Field-Effect Transistor, 7A I(D), 600V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
NXP Semiconductors
TRANSISTOR 7 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power
IXYS Corporation
Power Field-Effect Transistor, 7A I(D), 600V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
onsemi
TRANSISTOR 7.1 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 221A-09, 3 PIN, FET General Purpose Power
NXP Semiconductors
TRANSISTOR 6.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Toshiba America Electronic Components
TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power
IXYS Semiconductor
N-Channel 600V 7A 1.1Ω Surface Mount PolarHV Power Mosfet - TO-263
We sincerely hope that we can be your best partner in the distribution of components! Keep trying .Go ahead with our mission.
Got Question? Call us 24/7
Payment Method