SIHF634NL-E3

Vendor: Vishay Intertechnologies

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Manufacturer No:

Vishay Intertechnologies

Category:

Power Field-Effect Transistors

Detailed Description:

TRANSISTOR 8 A, 250 V, 0.435 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power

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inventory:5692

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Alternative Parts
IRF634NL

Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 250V, 0.435ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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IRF634NLPBF

Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 250V, 0.435ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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FQI140N03L

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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FQI5N30

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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FQI58N08TU

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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2SK3456-S

Renesas Electronics Corporation

12A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN

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IRFI740A

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3

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FQI8N25TU

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8A I(D), 250V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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STI16N65M5

STMicroelectronics

12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

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FQI3N25

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.8A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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IRLI530A

Samsung Semiconductor

Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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STI30N65M5

STMicroelectronics

22A, 650V, 0.139ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

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NP82N055DLE

Renesas Electronics Corporation

82A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN

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STI85NF55

STMicroelectronics

POWER, FET

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STB80NF55-08-1

STMicroelectronics

80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3

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STB5NK52ZD-1

STMicroelectronics

4.4A, 520V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-2

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IPI90N06S4-04

Infineon Technologies AG

Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

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RF1S640

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA,

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FQI70N08TU

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 70A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

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FQI5N40

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.5A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

INQUIRE
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