SIHFS9N60ATRL-GE3
Vendor: Vishay Siliconix
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Vishay Siliconix
Category:
Power Field-Effect Transistors
Detailed Description:
TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
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inventory:17246
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Vishay Intertechnologies
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Vishay Intertechnologies
TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Vishay Intertechnologies
TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power
Vishay Intertechnologies
TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Vishay Intertechnologies
TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Vishay Intertechnologies
TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Vishay Intertechnologies
TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Vishay Intertechnologies
TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power
Vishay Intertechnologies
TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power
Vishay Intertechnologies
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Vishay Intertechnologies
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Vishay Intertechnologies
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3
Vishay Intertechnologies
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
Renesas Electronics Corporation
82A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, TO-263, 3 PIN
International Rectifier
Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
International Rectifier
Power Field-Effect Transistor, 75A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Vishay Intertechnologies
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Samsung Semiconductor
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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