SPW35N60C3FKSA1
Vendor: Infineon Technologies AG
$12.272
Manufacturer No:
Infineon Technologies AG
Category:
Power Field-Effect Transistors
Detailed Description:
Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN
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inventory:14057
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Infineon Technologies AG
Power Field-Effect Transistor, 34.6A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
STMicroelectronics
35A, 600V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Infineon Technologies AG
Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
STMicroelectronics
N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) Power MOSFET (with fast diode) in a TO-247 package
ROHM Semiconductor
Power Field-Effect Transistor, 35A I(D), 600V, 0.102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
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