STP60N05-14
Vendor: STMicroelectronics
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Manufacturer No:
STMicroelectronics
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Unclassified
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inventory:3980
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STMicroelectronics
N-channel 900 V, 0.72 Ohm typ., 11 A SuperMESH Power MOSFET in TO-247 package
STMicroelectronics
N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET
STMicroelectronics
Automotive-grade N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET H5 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET
Sensitron Semiconductors
Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
Sensitron Semiconductors
Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
STMicroelectronics
2.2A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, TO-251, IPAK-3
STMicroelectronics
17A, 50V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3
STMicroelectronics
N-channel 33 V clamped, 9.5 mOhm typ., 70 A fully protected SAFeFET Power MOSFET in a DPAK package
STMicroelectronics
60A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 1.6A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Renesas Electronics Corporation
85A, 60V, 0.0066ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, SC-46, 3 PIN
STMicroelectronics
22A, 30V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Samsung Semiconductor
Power Field-Effect Transistor, 22A I(D), 450V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Samsung Semiconductor
Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
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