20N60L-T47-T
Vendor: Unisonic Technologies Co Ltd
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Manufacturer No:
Unisonic Technologies Co Ltd
Category:
Power Field-Effect Transistors
Detailed Description:
Power Field-Effect Transistor, 20A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
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inventory:3111
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Advanced Power Technology
Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Microsemi FPGA & SoC
Power Field-Effect Transistor, 19A I(D), 550V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Microsemi FPGA & SoC
Power Field-Effect Transistor, 65A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Microsemi FPGA & SoC
Power Field-Effect Transistor, 41A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
Microsemi FPGA & SoC
Power Field-Effect Transistor, 15A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Advanced Power Technology
Power Field-Effect Transistor, 75A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Microsemi FPGA & SoC
Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Microsemi FPGA & SoC
Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
STMicroelectronics
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 650V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 650V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 650V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 650V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 22A I(D), 650V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, LEAD FREE PACKAGE-3
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