20N65L-T47-T
Vendor: Unisonic Technologies Co Ltd
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Unisonic Technologies Co Ltd
Category:
Power Field-Effect Transistors
Detailed Description:
Power Field-Effect Transistor, 20A I(D), 650V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
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inventory:3102
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Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 650V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 650V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 20A I(D), 650V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 15A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, HALOGEN FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 15A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, LEAD FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, LEAD FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, HALOGEN FREE PACKAGE-3
STMicroelectronics
N-channel 950 V, 1.1 Ohm, 7.2 A, TO-247, Zener-protected SuperMESH3; Power MOSFET
STMicroelectronics
51A, 600V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3
NTE Electronics Inc
Power Field-Effect Transistor, 20A I(D), 600V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
STMicroelectronics
7.2A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Samsung Semiconductor
Power Field-Effect Transistor, 15A I(D), 350V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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