2SK3513-01L
Vendor: Fuji Electric Co Ltd
Call
Manufacturer No:
Fuji Electric Co Ltd
Category:
Power Field-Effect Transistors
Detailed Description:
Power Field-Effect Transistor, 12A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Package:
Data Sheet:
Datasheet
Product Status:
Active
inventory:6060
Add to Cart
RFQ
Go Shopping
ON Semiconductor
Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, I2PAK, 1000-TUBE
STMicroelectronics
N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET
STMicroelectronics
N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package
Fuji Electric Co Ltd
Power Field-Effect Transistor, 9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3
Fuji Electric Co Ltd
Power Field-Effect Transistor, 11A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Fuji Electric Co Ltd
Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Fuji Electric Co Ltd
Power Field-Effect Transistor, 16A I(D), 600V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TPACK-3
Fuji Electric Co Ltd
Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Fuji Electric Co Ltd
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN
Fuji Electric Co Ltd
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
Infineon Technologies AG
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
STMicroelectronics
11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
Infineon Technologies AG
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3
NEC Electronics Group
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, FIN CUT, MP-25, TO-262, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
We sincerely hope that we can be your best partner in the distribution of components! Keep trying .Go ahead with our mission.
Got Question? Call us 24/7
Payment Method