2SK3299-S
Vendor: Renesas Electronics Corporation
Call
Manufacturer No:
Renesas Electronics Corporation
Category:
Power Field-Effect Transistors
Detailed Description:
10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, FIN CUT, MP-25, TO-262, 3 PIN
Package:
Data Sheet:
Datasheet
Product Status:
Obsolete
inventory:2234
Add to Cart
RFQ
Go Shopping
NEC Electronics Group
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, FIN CUT, MP-25, TO-262, 3 PIN
STMicroelectronics
20A, 600V, 0.29ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2A I(D), 900V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
Renesas Electronics Corporation
12A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
ON Semiconductor
Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, I2PAK, 1000-TUBE
STMicroelectronics
N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET
STMicroelectronics
N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in an I2PAK package
Fuji Electric Co Ltd
Power Field-Effect Transistor, 9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3
Fuji Electric Co Ltd
Power Field-Effect Transistor, 11A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Fuji Electric Co Ltd
Power Field-Effect Transistor, 12A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Fuji Electric Co Ltd
Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Fuji Electric Co Ltd
Power Field-Effect Transistor, 16A I(D), 600V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TPACK-3
Fuji Electric Co Ltd
Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Vishay Intertechnologies
TRANSISTOR 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power
Vishay Intertechnologies
TRANSISTOR 10 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power
We sincerely hope that we can be your best partner in the distribution of components! Keep trying .Go ahead with our mission.
Got Question? Call us 24/7
Payment Method