STMicroelectronics

7.6A, 900V, 1.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

STMicroelectronics

N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-3P, 3 PIN

Renesas Electronics Corporation

40A, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PL, 3 PIN

Shindengen Electronic Manufacturing Co Ltd

Power Field-Effect Transistor, 10A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ITO-3P, 3 PIN

Microsemi FPGA & SoC

Power Field-Effect Transistor, 18A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT PACKAGE-3

Samsung Semiconductor

Power Field-Effect Transistor, 34A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

STMicroelectronics

N-channel 900 V, 0.72 Ohm typ., 11 A SuperMESH Power MOSFET in TO-247 package

STMicroelectronics

N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package

Vishay Intertechnologies

Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3 PIN

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 15A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, HALOGEN FREE PACKAGE-3

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 15A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, LEAD FREE PACKAGE-3

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 20A I(D), 650V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, LEAD FREE PACKAGE-3

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 20A I(D), 650V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, HALOGEN FREE PACKAGE-3

STMicroelectronics

N-channel 950 V, 1.1 Ohm, 7.2 A, TO-247, Zener-protected SuperMESH3; Power MOSFET

STMicroelectronics

51A, 600V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN

Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3

STMicroelectronics

50A BUF OR INV BASED PRPHL DRVR, PSFM3, TO-247, 3 PIN