IPD30N06S2-23
Vendor: infineon
$1.26
Manufacturer No:
infineon
Category:
Automotive MOSFET
Detailed Description:
55V,N-Ch,23mΩmax,AutomotiveMOSFET,DPAK,OptiMOS™
Package:
DPAK (PG-TO252-3)
Data Sheet:
Datasheet
Product Status:
active and preferred
inventory:13920
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Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Power Field-Effect Transistor, 3A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
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Power Field-Effect Transistor, 22A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
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Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
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Power Field-Effect Transistor, 3A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3
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Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Power Field-Effect Transistor, 60A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
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