12N10L-TN3-R
Vendor: UTC(Unisonic Tech)
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Manufacturer No:
UTC(Unisonic Tech)
Category:
Unclassified
Detailed Description:
Package:
TO-252-2(DPAK)
Data Sheet:
Datasheet
Product Status:
inventory:26747
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Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 3A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 22A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
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