UT12N10G-TN3-T
Vendor: Unisonic
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Manufacturer No:
Unisonic
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Integrated Circuits (ICs)
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inventory:28308
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Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 3A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 22A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 3A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 60A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
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