12N10G-TA3-T
Vendor: Unisonic Technologies Co Ltd
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Manufacturer No:
Unisonic Technologies Co Ltd
Category:
Power Field-Effect Transistors
Detailed Description:
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Package:
FLANGE MOUNT, R-PSFM-T3
Data Sheet:
Datasheet
Product Status:
Active
inventory:5928
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Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251,
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 120A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 7A I(D), 750V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
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