IRFP350
Vendor: Vishay Siliconix
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Manufacturer No:
Vishay Siliconix
Category:
Transistors - FETs, MOSFETs - Single
Detailed Description:
MOSFET N-CH 400V 16A TO247-3
Package:
TO-247-3
Data Sheet:
Datasheet
Product Status:
Obsolete
inventory:4642
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Vishay Intertechnologies
Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3 PIN
Vishay Intertechnologies
TRANSISTOR 16 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Vishay Intertechnologies
TRANSISTOR 16 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN, FET General Purpose Power
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-3P, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 11A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
STMicroelectronics
N-channel 300 V, 0.037 Ohm, 60 A low gate charge STripFET Power MOSFET in TO-247 package
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Samsung Semiconductor
Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 50V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Microsemi FPGA & SoC
Power Field-Effect Transistor, 23A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT, TO-247(B), 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Shindengen Electronic Manufacturing Co Ltd
Power Field-Effect Transistor, 10A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN
Samsung Semiconductor
Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Fuji Electric Co Ltd
Power Field-Effect Transistor, 8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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