International Rectifier

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Vishay Siliconix

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Vishay Siliconix

TRANSISTOR 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power

International Rectifier

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Vishay Siliconix

TRANSISTOR 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power

Vishay Siliconix

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Vishay Siliconix

MOSFET N-CH 200V 4.8A DPAK

Vishay Siliconix

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

VISHAY

TO-252-3 N-CH 200V 2.6A 1.5Ω

Infineon

DPAK N-CH 200V 5A

International Rectifier

Trans MOSFET N-CH 200V 5A 3Pin(2+Tab) DPAK T/R

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 1.5Ω; ID 2.6A; TO-252AA; PD 25W; VGS +/-20V

Diodes