RFP12P08
Vendor: 瑞萨-Renesas
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Manufacturer No:
瑞萨-Renesas
Category:
Uncategorized
Detailed Description:
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs
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Data Sheet:
Datasheet
Product Status:
inventory:25571
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Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Harris Semiconductor
Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild Semiconductor Corporation
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Samsung Semiconductor
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Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Harris Semiconductor
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Harris Semiconductor
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics
5.3A, 600V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Harris Semiconductor
Power Field-Effect Transistor, 12A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 55V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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