Vishay Siliconix

MOSFET N-CH 500V 2.5A TO-262

ST Microelectronics

Trans MOSFET N-CH 600V 4.2A 3Pin(3+Tab) TO-220

Vishay Siliconix

MOSFET N-CH 500V 2.5A TO-262

Ixys

St

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

STMicroelectronics

4.2A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3

STMicroelectronics

3A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FP, 3 PIN

International Rectifier

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Toshiba America Electronic Components

TRANSISTOR 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power

Toshiba America Electronic Components

TRANSISTOR 2 A, 600 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

Toshiba America Electronic Components

TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-8M1B, 3 PIN, FET General Purpose Power

Panasonic Electronic Components

Power Field-Effect Transistor, 5A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Samsung Semiconductor

Power Field-Effect Transistor, 2.9A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

International Rectifier

Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

Powerex Power Semiconductors

Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN

International Rectifier

Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4

Toshiba America Electronic Components

TRANSISTOR 3.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS, TO-220IS, 3 PIN, FET General Purpose Power

Samsung Semiconductor

Power Field-Effect Transistor, 4A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN