RFG40N10LE
Vendor: Rochester Electronics LLC
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Rochester Electronics LLC
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inventory:17698
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Harris Semiconductor
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Harris Semiconductor
Power Field-Effect Transistor, 1.5A I(D), 55V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Harris Semiconductor
Power Field-Effect Transistor, 25A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Harris Semiconductor
Power Field-Effect Transistor, 2A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Harris Semiconductor
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
STMicroelectronics
7.2A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Samsung Semiconductor
Power Field-Effect Transistor, 15A I(D), 350V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
International Rectifier
Power Field-Effect Transistor, 27A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Samsung Semiconductor
Power Field-Effect Transistor, 21A I(D), 250V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
STMicroelectronics
54A, 500V, 0.054ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN
STMicroelectronics
N-channel 900 V, 0.72 Ohm typ., 11 A SuperMESH Power MOSFET in TO-247 package
STMicroelectronics
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 15A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, HALOGEN FREE PACKAGE-3
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 15A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, LEAD FREE PACKAGE-3
- Inventory Orders Will Begin Processing Once semmial Has Received Your Payment. Orders Typically Take 2-3 Days To Process And Then Ship.
- For Backordered Orders, The Package Will Be Shipped After All Items Are Ready, Please Refer To The Delivery Time Information In The Quotation Result Before Payment.
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PLT3S-M6120
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Standard, Locking Black 3.00" (76.20mm) 0.190" (4.83mm) 50 lbs (22.68 kg) VIEW MOREK010007-6P
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PLT1.5I-C6120
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Standard, Locking Black 1.38" (35.00mm) 0.142" (3.61mm) 25 lbs (11.34 kg) VIEW MOREK010007-6P
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Standard, Locking Black 1.88" (47.75mm) 0.190" (4.83mm) 50 lbs (22.68 kg) VIEW MOREK010007-6P
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Basic Components Kit Starter Kit VIEW MORE
CEST1-C5
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Rectangular - 3.980" L x 2.280" W (101.09mm x 57.91mm) Grommet, Entry Plate Black VIEW MOREK010007-6P
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Panduit Corp
Grommet 1.069" (27.15mm) Black VIEW MOREK010007-6P
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CESU2-E22
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Rectangular - 5.790" L x 2.320" W (147.07mm x 58.93mm) Grommet, Entry Plate Black VIEW MOREK010007-6P
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